WSD4018DN22
Description
The WSD4018DN22 is the highest performance trench P-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WSD4018DN22 meet the Ro HS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
P-Channel MOSFET
Product Summery
BVDSS -40V
RDSON 26mΩ
ID -18A
Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch
DFN2X2-6S Pin Configuration
D (1,2,5,6,7) (3) G
S (4,8)
Absolute Maximum Ratings
Symbol VDS VGS
ID@Tc=25℃ ID@Tc=70℃
IDM PD@Tc=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 300μS Pulsed Drain Current,VGS=-4.5V2...
