WSD4082DN33
Description
The WSD4082DN33 is the highest performance trench Dual N- Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The WSD4082DN33 meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Dual N-Channel MOSFET
Product Summery
BVDSS 40V
RDS(ON) 18mΩ
ID 14A
Applications
- POL Applications
- MB / VGA / Vcore
- Load Switch
- SMPS 2nd SR
DFN3X3-8L Pin Configuration
D1 (7,8)
(2)
(4)
G1
G2
D2 (5,6)
S1 (1)
S2 (3)
Absolute Maximum Ratings (TA=25°C, Unless Otherwise Noted)
Symbol VDS VGS
IDM PD EAS TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current (Continuous) 1,3
Drain Current (Pulse) 2 Power Dissipation Single Pulse Avalanche...
