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WSD6056DN56 - Dual N-Channel MOSFET

Description

The WSD6056DN56 is the highest performance trench Dual N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD6056DN56 Dual N-Channel MOSFET Product Summery BVDSS 60V RDS(ON) 16mΩ ID 45A.

📥 Download Datasheet

Datasheet Details

Part number WSD6056DN56
Manufacturer Winsok
File Size 709.09 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSD6056DN56 Datasheet

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Full PDF Text Transcription

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General Description The WSD6056DN56 is the highest performance trench Dual N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD6056DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
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