WSD60N10GDN56 Description
The WSD60N10GDN56 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD60N10GDN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
WSD60N10GDN56 Key Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available