WSD60N10GDN56
Description
The WSD60N10GDN56 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The WSD60N10GDN56 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
N-Channel MOSFET
Product Summery
BVDSS 100V
RDS(ON) 8.5mΩ
ID 60A
Applications
- Power Management in TV Converter.
- DC-DC Converter
- LED TV Back Light
DFN5X6-8L Pin Configuration
D1 (5,6,7,8) (4) G1
S1 (1,2,3)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25°C IDP EAS
PD@TC=25°C TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy, Single pulse Total Power Dissipation Storage Temperature Range...
