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WSD60N10GDN56 - N-Channel MOSFET

Description

The WSD60N10GDN56 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD60N10GDN56 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 8.5mΩ ID 60A.

📥 Download Datasheet

Datasheet Details

Part number WSD60N10GDN56
Manufacturer Winsok
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet WSD60N10GDN56 Datasheet

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Full PDF Text Transcription

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General Description The WSD60N10GDN56 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD60N10GDN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features ⚫ Advanced high cell density Trench technology ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ 100% EAS Guaranteed ⚫ Green Device Available WSD60N10GDN56 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 8.5mΩ ID 60A Applications ⚫ Power Management in TV Converter.
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