WSD60P06DN56
Description
The WSD60P06DN56 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The WSD60P06DN56 meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
P-Ch MOSFET
Product Summery
BVDSS -60V
RDSON 20mΩ
Applications z Power Management z Load Switch
DFN5X6_8L Pin Configuration
ID -60A
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM PD@TC=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating -60 ±20 -60 -31 -140...
