WSD75N12GDN56
Description
The WSD75N12GDN56 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and QG. This device is ideal for high frequency switching and synchronous rectification.
Features
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150°C operating temperature
- Pb-free lead plating
- 100% UIS tested.
N-Channel MOSFET
Product Summery
BVDSS 120V
RDS(ON) 6.0mΩ
ID 75A
Applications
- DC/DC Converter
- Load switch.
DFN5X6-8L Pin Configuration
D1 (5,6,7,8) (4) G1
S1 (1,2,3)
Absolute Maximum Ratings
Symbol VDS VGS
IDM IAR EAS PD TSTG TJ TL
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1( TC=25°C) Continuous Drain Current 1( TC=70°C) Pulsed Drain Current Single pulse avalanche current Single pulse avalanche energy
Power Dissipation Storage...
