WSF30P04 Datasheet | Winsok

Description The WSF30P04 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF30P04 meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS -40V RDSON 30mΩ ID -24A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO-252-2L Pin Configuration (2) (1) G S (3) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM IAR EAR EAS PD@TC=25℃ PD@TC=100℃ PD@TA=25℃ PD@TA=70℃ TJ TSTG Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Avalanche Current Repetitive avalanche energy L=0.1m H Single pulse avalanche energy L=0.3m H Total Power Dissipation4 Total Power Dissipation4 Power Dissipation A Power Dissipation A Junction and Storage Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating -40 ±20 -24 -18 -30 -24 30 60 50 25 2.5 1.6 -55 to 175 Units V V A A A A m J m J W W W W ℃ Typ. ------- Max. 50 25 2.5 Unit ℃/W ℃/W ℃/W .winsok.tw Page 1 Rev 3.0: Oct.2023 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature...