WSG02P06
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS
RDSON
-60V
175mΩ
-2A
Applications z High Frequency Point-of-Load Synchronous
Buck Converter. z Networking DC-DC Power System z Load Switch
SOT-223-3L Pin Configuration
(2)
(1) G
S (3)
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V...
