WSG02P06 - P-Ch MOSFET

Datasheet Summary

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID -60V 175mΩ -2A.

Winsok

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Datasheet Details

Part number	WSG02P06
Manufacturer	Winsok
File Size	1.95 MB
Description	P-Ch MOSFET
Datasheet	WSG02P06 Datasheet
Additional preview pages of the WSG02P06 datasheet.

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WSG02P06 P-Ch MOSFET General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID -60V 175mΩ -2A Applications z High Frequency Point-of-Load Synchronous Buck Converter.

Published: Jun 21, 2025 |