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WSG02P06 - P-Ch MOSFET

General Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID -60V 175mΩ -2A.

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Datasheet Details

Part number WSG02P06
Manufacturer Winsok
File Size 1.95 MB
Description P-Ch MOSFET
Datasheet download datasheet WSG02P06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSG02P06 P-Ch MOSFET General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID -60V 175mΩ -2A Applications z High Frequency Point-of-Load Synchronous Buck Converter.