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WSP08N10G - N-Ch MOSFET

Datasheet Summary

Description

The WSP08N10G is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available SOP-8L Pin Configuration (5,6,7,8) D (4) G S (1,2,3) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 S.

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Datasheet Details

Part number WSP08N10G
Manufacturer Winsok
File Size 1.98 MB
Description N-Ch MOSFET
Datasheet download datasheet WSP08N10G Datasheet
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Full PDF Text Transcription

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General Description The WSP08N10G is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF08N10G meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. WSP08N10G N-Ch MOSFET Product Summery BVDSS 100V RDSON 18mΩ ID 10A Applications z Power Management in DC/DC Converter.
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