Datasheet4U Logo Datasheet4U.com

WSP4407 - P-Ch MOSFET

Datasheet Summary

Description

The WSP4407 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 9.6mΩ ID -13A.

📥 Download Datasheet

Datasheet preview – WSP4407

Datasheet Details

Part number WSP4407
Manufacturer Winsok
File Size 2.02 MB
Description P-Ch MOSFET
Datasheet download datasheet WSP4407 Datasheet
Additional preview pages of the WSP4407 datasheet.

📁 Similar Datasheet

  • WSP4430 - N-Channel 30V MOSFET (VBsemi)
  • WSP4067 - N- & P-Channel 40V MOSFET (VBsemi)
  • WSP4068 - N-Channel 40V MOSFET (VBsemi)
  • WSP4807 - Dual P-Channel 30V MOSFET (VBsemi)
  • WSP4886 - Dual N-Channel MOSFET (VBsemi)
  • WSP10D100 - Power Schottky Rectifier (WINSEMI SEMICONDUCTOR)
  • WSP20D100 - Power Schottky Rectifier (WINSEMI SEMICONDUCTOR)
  • WSP20D150 - Silicon Controlled Rectifiers (Winsemi)
  • WSP20D65 - Power Schottky Rectifier (WINSEMI SEMICONDUCTOR)
  • WSP2110 - VOC Gas Sensor (Winsen)
Other Datasheets by Winsok

Full PDF Text Transcription

Click to expand full text
WSP4407 P-Ch MOSFET General Description The WSP4407 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSP4407 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 9.
Published: |