Datasheet4U Logo Datasheet4U.com

WSP4884 - Dual N-Channel MOSFET

General Description

The WSP4884 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 18.5mΩ ID 8.8A.

📥 Download Datasheet

Datasheet Details

Part number WSP4884
Manufacturer Winsok
File Size 2.06 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSP4884 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WSP4886 Dual N-Channel MOSFET VBsemi
WSP4807 Dual P-Channel 30V MOSFET VBsemi
WSP4067 N- & P-Channel 40V MOSFET VBsemi
WSP4068 N-Channel 40V MOSFET VBsemi
WSP4430 N-Channel 30V MOSFET VBsemi

Other Datasheets by Winsok

Part Number Description
WSP4882 Dual N-Channel MOSFET
WSP4805 Dual P-Ch MOSFET
WSP4807 Dual P-Ch MOSFET
WSP4067 N&P-Channel MOSFET
WSP4067B N&P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WSP4884 Dual N-Channel MOSFET General Description The WSP4884 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The WSP4884 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 18.5mΩ ID 8.