WSR80N08
Description
The WSR80N08 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The WSR80N08 meet the Ro HS and Green Product requirement,100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 80V
RDSON 8.4mΩ
ID 80A
Applications z Power Management z DC/DC Converter z Load Switch
TO-220-3L Pin Configuration
(2)
(1) G
S (3)
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IAR EAR EAS PD TJ
TJM TJ RθJA RθJC
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25°Continuous Drain Current. Lead current limit. TC = 25°C,pulse width limited by TJM TC = 25°C,Avalanche Current. TC = 25°C,Single Pulse Avalanche Energy3 TC = 25°C,Single Pulse Avalanche Energy3 TC =...
