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WST2011 Datasheet PDF

Winsok WST2011

The WST2011 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2011 meet the RoHS and Green Product requirement with full function reliability approved.
Part No. WST2011
Datasheet WST2011 Download
Manufacturer
Winsok
Description Dual P-Ch MOSFET
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WST2011 datasheet page 1 preview

GENERAL DESCRIPTION

Product Summery

FEATURES

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available BVDSS -20V RDSON 80mΩ ID -3.2A

APPLICATIONS

z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT-23-6L Pin Configuration (6) (4) D1 D2 (1) (3) G1 G2

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range S1 S2 (5) (2) Rating 10s Steady State -20 ±12 -3.6 -3.2 -2.6 -2.4 -12 1.7 1.4 1.2 0.9 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Typ. ------- Max.
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