WFF4N65
Overview
- RDS(on) (Max 2.7 Ω )@VGS=10V
- Gate Charge (Typical 15nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
| Part | WFF4N65 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Wisdom technologies |
| Size | 735.94 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| WFF4N65S | Winsemi | 650V Super-Junction Power MOSFET |
| WFF4N65L | Winsemi | Silicon N-Channel MOSFET |
| WFF4N60C | Winsemi | Silicon N-Channel MOSFET |
| WFF4N60 | Winsemi | Silicon N-Channel MOSFET |