Datasheet4U Logo Datasheet4U.com

WFP7N60 - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain.
  • 1. Gate { ▲.
  • { 3. Source General.

📥 Download Datasheet

Datasheet preview – WFP7N60

Datasheet Details

Part number WFP7N60
Manufacturer Wisdom technologies
File Size 778.19 KB
Description N-Channel MOSFET
Datasheet download datasheet WFP7N60 Datasheet
Additional preview pages of the WFP7N60 datasheet.

📁 Similar Datasheet

  • WFP70N06 - Silicon N-Channel MOSFET (Winsemi)
  • WFP70N06T - Silicon N-Channel MOSFET (Winsemi)
  • WFP740 - Silicon N-Channel MOSFET (Winsemi)
  • WFP10N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFP10N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFP12N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFP12N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFP13N50 - Silicon N-Channel MOSFET (Winsemi)
  • WFP13N50C - Silicon N-Channel MOSFET (Winsemi)
  • WFP18N20 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
Other Datasheets by Wisdom technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Wisdom Semiconductor WFP7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Published: |