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WFU1N80 - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • RDS(on) (Max 18.0 Ω )@VGS=10V.
  • Gate Charge (Typical 6.5nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) General.

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Datasheet preview – WFU1N80

Datasheet Details

Part number WFU1N80
Manufacturer Wisdom technologies
File Size 636.43 KB
Description N-Channel MOSFET
Datasheet download datasheet WFU1N80 Datasheet
Additional preview pages of the WFU1N80 datasheet.

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Full PDF Text Transcription

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Wisdom Semiconductor WFU1N80 N-Channel MOSFET Features ■ RDS(on) (Max 18.0 Ω )@VGS=10V ■ Gate Charge (Typical 6.5nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3.
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