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C2M0045170P - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 2nd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Resistant to latch-up.
  • Halogen free, RoHS compliant TO-247-4L Plus Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Package Types: TO-247-4L Plus Power Source (Pin 2) PN’s: C2M0045170P Wolfspee.

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Datasheet Details

Part number C2M0045170P
Manufacturer Wolfspeed
File Size 1.05 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C2M0045170P Datasheet
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C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen free, RoHS compliant TO-247-4L Plus Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Package Types: TO-247-4L Plus Power Source (Pin 2) PN’s: C2M0045170P Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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