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C3D04060F
3rd Generation 600 V, 4 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
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Package Type: TO-220-F2 Marking: C3D04060
Wolfspeed, Inc.
C3D04060F Datasheet
