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C3D08060A - 8A Silicon Carbide Schottky

General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Key Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
  • Zero Reverse Recovery Current / Forward Recovery Voltage.
  • Temperature-Independent Switching Behavior Typical.

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C3D08060A 3rd Generation 600V, 8 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Package Types: TO-220-2 Marking: C3D08060 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc.