C3M0021120D Overview
C3M0021120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode.
C3M0021120D Key Features
- 3rd generation SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
