C3M0045065K
Key Features
- C3MTM Silicon Carbide (SiC) MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
Applications
- Server & Tele PSU
