C3M0120090J
Key Features
- New C3M SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- New low impedance package with driver source
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source Drain (TAB) 1 2 34 5 6 7 G KS S S S S S Gate (Pin
- Driver Source (Pin
