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C3M0120090J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • New C3M SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • New low impedance package with driver source.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source Drain (TAB) 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M0120090J Packa.

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Datasheet Details

Part number C3M0120090J
Manufacturer Wolfspeed
File Size 793.85 KB
Description Silicon Carbide Power MOSFET
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C3M0120090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source Drain (TAB) 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M0120090J Package TO-263-7 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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