Datasheet4U Logo Datasheet4U.com

C3M0120100J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • C3MTM SiC MOSFET technology.
  • Low parasitic inductance with separate driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0120100J TO.

📥 Download Datasheet

Datasheet preview – C3M0120100J

Datasheet Details

Part number C3M0120100J
Manufacturer Wolfspeed
File Size 808.20 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0120100J Datasheet
Additional preview pages of the C3M0120100J datasheet.

📁 Similar Datasheet

Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
C3M0120100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0120100J TO 263-7 C3M0120100J Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
Published: |