C3M0120100J Description
C3M0120100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB).
C3M0120100J Key Features
- C3MTM SiC MOSFET technology
- Low parasitic inductance with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant