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C6D10170H - 10A Silicon Carbide Schottky Diode

General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Key Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
  • Zero Reverse Recovery Current / Forward Recovery Voltage.
  • Temperature-Independent Switching Behavior.
  • Low Profile Package with Low Inductance Typical.

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Datasheet Details

Part number C6D10170H
Manufacturer Wolfspeed
File Size 435.10 KB
Description 10A Silicon Carbide Schottky Diode
Datasheet download datasheet C6D10170H Datasheet

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C6D10170H 6th Generation 1700 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.