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CAB011A12GM3 - Half-Bridge Module

Key Features

  • Ultra-Low Loss.
  • High Frequency Operation.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation.
  • Aluminum Nitride Ceramic Substrate.
  • Optional Pre-Applied Thermal Interface Material VDS RDS(on) 1200 V 11 mΩ DC+ G1 S1 AC T1 G2 S2 -t° T2 DC- Typical.

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CAB011A12GM3, CAB011A12GM3T 1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminum Nitride Ceramic Substrate • Optional Pre-Applied Thermal Interface Material VDS RDS(on) 1200 V 11 mΩ DC+ G1 S1 AC T1 G2 S2 -t° T2 DC- Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • Reduced Thermal Requirements and System Cost Key Parameters Parameter Symbol Min. Typ. Max.