CAB320M17XM3
Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Wolfspeed’s Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
- 1700 V Drain-Source Voltage C
Applications
- Medical
