CAB425M12XM3
Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Switching-Optimized Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
- 1200 V Drain-Source Voltage C V+ V+ G1 K1 G2 K2 V- Mid NTC1 -t° NTC2
Applications
- Vehicle Fast Chargers
