CAB425M12XM3 Description
CAB425M12XM3 VDS 1200 V 5 4 IDS 3 425 A 2 1 1200 V, 3.2 mΩ, Silicon Carbide, Half-Bridge Module.
CAB425M12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Switching-Optimized Third
- Silicon Nitride Insulator and Copper Baseplate
- 1200 V Drain-Source Voltage