CAB450M12XM3 Description
CAB450M12XM3 VDS 1200 V 5 4 IDS 3 450 A 2 1 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module.
CAB450M12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Conduction-Optimized Third
- Silicon Nitride Insulator and Copper Baseplate
- 1200 V Drain-Source Voltage