CAB530M12BM3T Description
D V+ G1 K1 Mid CAB530M12BM3, C CAB530M12BM3T 1200 V, 530 A All-Silicon Carbide, Half-Bridge Module.
CAB530M12BM3T Key Features
- Industry Standard 62 mm Footprint
- Ultra Low Loss, High-Frequency Operation
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Copper Baseplate and Aluminum Nitride Insulator