CAB600M33LM3 Description
CAB600M33LM3 VDS 3300 V, 2.7 mΩ, Silicon Carbide, Half-Bridge Module IDS 3300 V 600 A Technical.
CAB600M33LM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low Stray Inductance (11 nH)
- AlSiC Baseplate
- High Thermal Conductivity Silicon Nitride Substrate
- Increased Thermal-Mechanical Performance
- 3300 V Drain-Source Voltage