CAB6R0A23GM4T
Key Features
- Ultra-Low Loss
- High Frequency Operation
- Zero Turn-Off Tail Current from MOSFET
- Normally-Off, Fail-Safe Device Operation
- Aluminium Nitride Substrate
- Optional Pre-Applied Thermal Interface Material VDS 2300 V RDS(on) 6.0 mΩ DC+ G1 S1 AC T1 G2 S2
Applications
- Energy Storage Systems
