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CBB021M12FM3, CBB021M12FM3T
1200 V, 21 mΩ, Silicon Carbide, Full-Bridge Module
Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material
VDS RDS(on)
1200 V 21 mΩ
DC+
G1
G3
S1
S3
AC1
AC2
G2 S2
DC- 1
G4 S4
DC- 2
T1 -t°
T2
Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation
System Benefits
• Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching
& Conduction Losses of SiC
• Reduced Thermal Requirements and System Cost
Key Parameters
Parameter
Symbol Min. Typ. Max.