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CCB032M12FM3, CCB032M12FM3T
1200 V, 32 mΩ, Silicon Carbide, Six-Pack Module
Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material
VDS RDS(on)
1200 V 32 mΩ
Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation
System Benefits
• Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching
& Conduction Losses of SiC
• Reduced Thermal Requirements and System Cost
Key Parameters
Parameter
Symbol Min. Typ. Max.
CCB032M12FM3 Datasheet
