CG2H40035 - RF Power GaN HEMT

Datasheet Summary

Description

Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

Up to 6 GHz Operation.
40 W typical PSAT.
64% Efficiency at PSAT.
14 dB Small Signal Gain at 3.5 GHz.
28 V Operation.

Wolfspeed

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Datasheet Details

Part number	CG2H40035
Manufacturer	Wolfspeed
File Size	2.29 MB
Description	RF Power GaN HEMT
Datasheet	CG2H40035 Datasheet
Additional preview pages of the CG2H40035 datasheet.

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CG2H40035 35 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PNs: CG2H40035P & CG2H40035F Features • Up to 6 GHz Operation • 40 W typical PSAT • 64% Efficiency at PSAT • 14 dB Small Signal Gain at 3.

Published: Jun 25, 2023 |