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CGH27060F - GaN HEMT

General Description

Wolfspeed’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.

Key Features

  • VHF - 3.0 GHz Operation.
  • 14 dB Small Signal Gain.
  • 8.0 W PAVE at < 2.0% EVM.
  • 27% Drain Efficiency at 8 W Average Power.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO Rev. 5.2, 2022-11-11 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered trademarks and the Wolfspeed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH27060F 60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Description Wolfspeed’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package. Package Types: 440193 PN: CGH27060F Typical Performance Over 2.3-2.7 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 15.1 2.35 28.3 10.0 2.4 GHz 14.7 2.16 27.6 7.3 2.5 GHz 14.3 2.01 27.3 6.0 2.6 GHz 14.3 2.13 26.7 7.0 2.7 GHz 14.5 2.82 26.3 10.