Datasheet Details
| Part number | CGH27060F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.45 MB |
| Description | GaN HEMT |
| Datasheet | CGH27060F-Wolfspeed.pdf |
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Overview: CGH27060F 60 W Peak, 28 V, GaN HEMT for Linear munications from VHF to 3.
| Part number | CGH27060F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.45 MB |
| Description | GaN HEMT |
| Datasheet | CGH27060F-Wolfspeed.pdf |
|
|
|
Wolfspeed’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, ms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.
The unmatched transistor is supplied in a ceramic/metal flange package.
Package Types: 440193 PN: CGH27060F Typical Performance Over 2.3-2.7 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 15.1 2.35 28.3 10.0 2.4 GHz 14.7 2.16 27.6 7.3 2.5 GHz 14.3 2.01 27.3 6.0 2.6 GHz 14.3 2.13 26.7 7.0 2.7 GHz 14.5 2.82 26.3 10.3 Units dB % % dB Note: Measured in the CGH27060F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01% Probability on CCDF
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGH27060F | GaN HEMT | Cree |
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