Datasheet Details
| Part number | CGH35240F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.79 MB |
| Description | GaN HEMT |
| Datasheet | CGH35240F-Wolfspeed.pdf |
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Overview: CGH35240F 240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar.
| Part number | CGH35240F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.79 MB |
| Description | GaN HEMT |
| Datasheet | CGH35240F-Wolfspeed.pdf |
|
|
|
Wolfspeed’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Types: 440201 PN: CGH35240F Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Outdoor Power Gain Power Added Efficiency 3.1 GHz 250 12.1 60 3.2 GHz 240 11.9 59 3.3 GHz 225 11.6 57 3.4 GHz 225 11.5 52 Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm 3.5 GHz 220 11.4 48 Units W dB %
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGH35240F | GaN HEMT | Cree |
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