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CGH35240F - GaN HEMT

Datasheet Summary

Description

Wolfspeed’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5 GHz S-Band radar amplifier applications.

Features

  • 3.1 - 3.5 GHz Operation.
  • 240 W Typical Output Power.
  • 11.6 dB Power Gain at PIN = 42.0 dBm.
  • 57% Typical Power Added Efficiency.
  • 50 ohm Internally Matched.

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Datasheet Details

Part number CGH35240F
Manufacturer Wolfspeed
File Size 1.79 MB
Description GaN HEMT
Datasheet download datasheet CGH35240F Datasheet
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CGH35240F 240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH35240F Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Outdoor Power Gain Power Added Efficiency 3.1 GHz 250 12.1 60 3.2 GHz 240 11.9 59 3.3 GHz 225 11.6 57 3.4 GHz 225 11.5 52 Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm 3.
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