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CGH40090PP - RF Power GaN HEMT

General Description

Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 2.5 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 100 W Typical PSAT 55% Efficiency at PSAT 28 V Operation Large Signal Models Available for ADS and MWO Rev. 5.2, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed. com CGH40090PP 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage VDSS Gate-to-Source Voltage VGS Storage Temperature TSTG Operating.

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CGH40090PP 90 W, RF Power GaN HEMT Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Package Types: 440199 PN’s: CGH40090PP Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 500 GHz 1.0 GHz 1.5 GHz 2.0GHz 2.5 GHz Units Small Signal Gain 17.6 15.6 14.1 12.4 12.4 dB Gain at PSAT 13.7 Saturated Power 66.8 11.7 9.2 7.0 10.