CGH40090PP Description
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and pressed amplifier circuits.
CGH40090PP Key Features
- Up to 2.5 GHz Operation
- 16 dB Small Signal Gain at 2.0 GHz
- 100 W Typical PSAT 55% Efficiency at PSAT 28 V Operation