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CGH40090PP Datasheet Rf Power Gan Hemt

Manufacturer: Wolfspeed

Overview: CGH40090PP 90 W, RF Power GaN HEMT.

General Description

Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 2.5 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 100 W Typical PSAT 55% Efficiency at PSAT 28 V Operation Large Signal Models Available for ADS and MWO Rev. 5.2, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed. com CGH40090PP 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage VDSS Gate-to-Source Voltage VGS Storage Temperature TSTG Operating.

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