CGH40090PP
Description
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Key Features
- Up to 2.5 GHz Operation
- 16 dB Small Signal Gain at 2.0 GHz
