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CGH55015P1 - GaN HEMT

Download the CGH55015P1 datasheet PDF. This datasheet also covers the CGH55030F1 variant, as both devices belong to the same gan hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications.

Key Features

  • 300 MHz Instantaneous Bandwidth.
  • 30 W Peak Power Capability.
  • 10 dB Small Signal Gain.
  • 4 W PAVE < 2.0% EVM.
  • 25% Efficiency at 4 W Average Power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CGH55030F1-Wolfspeed.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH55030F1/P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Description Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/P1 is suitable for 4.9 - 5.5 GHz applications as well. Package Types: 440196 & 440166 PN: CGH55030P1 & CGH55030F1 Typical Performance Over 5.5-5.