CGHV1J006D datasheet PDF for GaN HEMT Die.
| Part number | CGHV1J006D |
|---|---|
| Datasheet | CGHV1J006D-Wolfspeed.pdf |
| File Size | 737.09 KB |
| Manufacturer | Wolfspeed |
| Description | GaN HEMT Die |
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Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
CGHV1J006D | GaN HEMT Die | Cree |
| Part Number | Description |
|---|---|
| CGHV1J025D | GaN HEMT Die |
| CGHV1J070D | GaN HEMT Die |
| CGHV14250 | GaN HEMT |
| CGHV14800 | GaN HEMT |
| CGHV14800F1 | 800W GaN Transistor |
| CGHV1F006S | GaN HEMT |
| CGHV1F025S | GaN HEMT |
| CGHV27015S | GaN HEMT |
| CGHV31500F1 | 500W GaN HEMT |
| CGHV40030 | GaN HEMT |
