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CGHV1J006D - GaN HEMT Die

General Description

Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process.

Key Features

  • It is ideal for a variety of.

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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D Features • 17 dB Typ. Small Signal Gain at 10 GHz • 60% Typ.