CGHV1J006D Overview
Description
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features.
Key Features
- 17 dB Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- 6 W Typical PSAT 40 V Operation
- Up to 18 GHz Operation
