Datasheet4U Logo Datasheet4U.com

CGHV31500F1 - 500W GaN HEMT

General Description

Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band.

The device has been developed with long pulse capability to meet the developing trends in radar architectures.

Key Features

  • PSAT: 500W.
  • DE: >65%.
  • LSG: 13 dB Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGHV31500F1 500W GaN HPA MACOM
CGHV31500F GaN HEMT Cree
CGHV35060MP GaN HEMT Cree
CGHV35120F GaN HEMT MACOM
CGHV35150 GaN HEMT Cree

Other Datasheets by Wolfspeed

Part Number Description
CGHV14250 GaN HEMT
CGHV14800 GaN HEMT
CGHV14800F1 800W GaN Transistor
CGHV1F006S GaN HEMT
CGHV1F025S GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HEMT Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV31500F1 is based on Wolfspeed’s high power density 50 V, 0.4 μm GaN on Silicon Carbide (SiC) manufacturing process. The transistor is supplied in a ceramic/metal flange package. Package Type: 440226 PN: CGHV31500F1 Features • PSAT: 500W • DE: >65% • LSG: 13 dB Note: Features are typical performance across frequency under 25°C operation.