• Part: CMPA901A035F
  • Manufacturer: Wolfspeed
  • Size: 1.86 MB
Download CMPA901A035F Datasheet PDF
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CMPA901A035F Key Features

  • 11.0 GHz Operation
  • Typical Output Power 40 W
  • Typical Power Gain 23 dB
  • Typical PAE 35%
  • Operation up to 28 V

CMPA901A035F Description

The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package.