CMPA901A035F
Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.
Key Features
- 9.0 - 11.0 GHz Operation
- Typical Output Power 40 W
- Typical Power Gain 23 dB
- Typical PAE 35%
- Operation up to 28 V
