Datasheet4U Logo Datasheet4U.com

CMPA901A035F - Power Amplifier

Datasheet Summary

Description

The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.

Features

  • 9.0 - 11.0 GHz Operation.
  • Typical Output Power 40 W.
  • Typical Power Gain 23 dB.
  • Typical PAE 35%.
  • Operation up to 28 V.

📥 Download Datasheet

Datasheet preview – CMPA901A035F

Datasheet Details

Part number CMPA901A035F
Manufacturer Wolfspeed
File Size 1.86 MB
Description Power Amplifier
Datasheet download datasheet CMPA901A035F Datasheet
Additional preview pages of the CMPA901A035F datasheet.

📁 Similar Datasheet

Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
CMPA901A035F 35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. PN: CMPA901A035F Package Type: 440213 Typical Performance Over 9.0 - 11.0 GHz (TC = 25˚C) CW Performance Output Power Gain Power Added Efficiency 9.0 GHz 46 23.7 40 9.5 GHz 45 23.5 36 10.0 GHz 43 23.
Published: |