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CPM3-1200-0075A - SiC Gen 3 MOSFET

General Description

This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design.

Key Features

  • Enhanced 3rd Generation SiC MOSFET.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitance.
  • Fast intrinsic diode with low reverse recovery G S S.

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CPM3-1200-0075A. 1 CPM3-1200-0075A Wolfspeed SiC Gen 3 MOSFET Description This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for renewable energy and switch mode power supplies Features • Enhanced 3rd Generation SiC MOSFET • High blocking voltage with low on-resistance • High speed switching with low capacitance • Fast intrinsic diode with low reverse recovery G S S Applications • EV Chargers • Solar Inverters • SMPS • DC/DC Converters Absolute Maximum Ratings Stress beyond those listed under absolute maximum ratings may damage the device.