CPM4-0120-0149JS0A Datasheet | Wolfspeed

Description This is the Wolfspeed’s 4th generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for high frequency switching application including solar inverters and EV chargers. Features - Enhanced 4th Generation Si C MOSFET - High blocking voltage with low on-resistance - High speed switching with low capacitance - Fast intrinsic diode with low reverse recovery Package Types: Bare Die PN’s: CPM4-0120-0149JS0A Applications - EV Chargers - Server & Tele PSU - UPS - Solar Inverters - SMPS - DC/DC Converters Absolute Maximum Ratings Stress beyond those listed under absolute maximum ratings may damage the device. Parameter Symbol Rating Drain-Source Voltage, across Tvj Maximum Gate-Source Voltage, Peak Transient Capability Continuous Drain Current, VGS = 15V, assumes die packaged in TO-247 package with Rth(j- c) < 0.63 K/W Pulsed Drain Current, tp limited by Tvj(max) Virtual Junction and Storage Temperature VDS(max) VGS(max) Tc = 25°C Tc = 100°C ID(pulse) -8/+19 90 67 152 TVJ, Tstg -55 to +175 Maximum Processing Temperature, in non-reactive ambient Tproc Remended Operating Conditions Unit V V A A °C °C Parameter Remended Operating Gate - Source...