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E4M0013120K - Silicon Carbide Power MOSFET

Features

  • Package.
  • E4M generation SiC MOSFET technology Tab.
  • Optimized package with separate driver source pin Drain.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Reduc.

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Datasheet Details

Part number E4M0013120K
Manufacturer Wolfspeed
File Size 1.15 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet E4M0013120K Datasheet
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E4M0013120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • E4M generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency 1 234 Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters Part Number E4M0
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