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EAB450M12XM3 - Half-Bridge Module

Key Features

  • High Power Density Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Low Inductance (6.7 nH) Design.
  • Implements Conduction-Optimized Third Generation SiC MOSFET Technology.
  • Silicon Nitride Insulator and Copper Baseplate.
  • 1200 V Drain-Source Voltage C V+ V+ G1 K1 G2 K2 V- Mid NTC1 -t° NTC2.

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EAB450M12XM3 VDS 1200 V 5 4 IDS 3 450 A 2 1 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction-Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1200 V Drain-Source Voltage C V+ V+ G1 K1 G2 K2 V- Mid NTC1 -t° NTC2 Applications • Motor Drives and Traction Drives • Vehicle Fast Chargers • Automotive Test Equipment System Benefits 3 8,9 • Terminal layout allows for direct bus bar connection wBithout bends or bushings inductance design. enab4ling 5 a simple, low 1 • Isolated, integrated temperature sensing enables high-level temperature protection.