GTVA123501FA Datasheet PDF (Thermally-Enhanced High Power RF GaN)

GTVA123501FA - Thermally-Enhanced High Power RF GaN

Description

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.

Features

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle 22 21 20 19 18 17 16 15 0 80 70 60 50 40 Gain: 1200 MHz Gain: 1300 MHz 30 Gain: 1400 MHz Eff: 1200 MHz 20 Eff: 1300 MHz Eff: 1400 MHz g123501fa_gr300-1 10 0 50 100 150 200 250 300 350 400 450 Output Power (W) GTVA123501FA Package H-37265J-2 Features.
GaN on SiC HE.

Datasheet Details

Part number	GTVA123501FA
Manufacturer	Wolfspeed
File Size	187.83 KB
Description	Thermally-Enhanced High Power RF GaN
Datasheet	GTVA123501FA Datasheet
Additional preview pages of the GTVA123501FA datasheet.

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Full PDF Text Transcription

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GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400 MHz Description The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.

Published: Jun 28, 2019 |