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GTVA123501FA Datasheet

Manufacturer: Wolfspeed
GTVA123501FA datasheet preview

Datasheet Details

Part number GTVA123501FA
Datasheet GTVA123501FA-Wolfspeed.pdf
File Size 187.83 KB
Manufacturer Wolfspeed
Description Thermally-Enhanced High Power RF GaN
GTVA123501FA page 2 GTVA123501FA page 3

GTVA123501FA Overview

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.

GTVA123501FA Key Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance: pulse width = 300 μs
  • 1400 MHz, VDS = 50 V, IDQ = 100 mA
  • Output power = 350 W min @ P3dB
  • Drain Efficiency = 70 %
  • Gain = 18 dB
  • Human Body Model Class 1B (
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