PTAB182002FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Wolfspeed

Datasheet Details

Part number	PTAB182002FC
Manufacturer	Wolfspeed
File Size	381.22 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTAB182002FC Datasheet
Additional preview pages of the PTAB182002FC datasheet.

Product details

Description

The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, 3.84MHz BW 17 55 50 16 45 Gain 40 15 35 30 14 25 Efficiency 20 13 b182002fc gr1 15 36 38 40 42 44 46 48 Average Ou.

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Published: Oct 10, 2018 |