Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805
- 1880 MHz
Description
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8:1,
10 MHz carrier spacing, 3.84MHz BW
17 55
16 45
Gain
15 35
14...