Description
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8:1,
10 MHz carrier spacing, 3.84MHz BW
17 55
50
16 45
Gain
40
15 35
30
14 25
Efficiency
20
13
b182002fc gr1
15
36 38 40 42 44 46 48
Average Ou.
PTAB182002FC Datasheet
