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PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

t power amplifier applications in the 2300 to 2400 MHz frequency band.

Key Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with u Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V, IDQ = 120 mA, VGS1 = 1.3 V, VGS2 = 2.6 V, ƒ = 2400 MHz, 3GPP WCDMA p signal, PAR = 8 dB, 10 MHz carrier spacing, 16 BW 3.84 MHz 60 d 15 50 e Gain u 14 40 in 13 30 t 12 Effi.

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Datasheet Details

Part number PTAC240502FC
Manufacturer Wolfspeed
File Size 728.46 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC240502FC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular t power amplifier applications in the 2300 to 2400 MHz frequency band. c Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with u Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V, IDQ = 120 mA, VGS1 = 1.3 V, VGS2 = 2.6 V, ƒ = 2400 MHz, 3GPP WCDMA p signal, PAR = 8 dB, 10 MHz carrier spacing, 16 BW 3.