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PTMA210152M - Wideband RF LDMOS Integrated Power Amplifier

General Description

The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band.

This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.

Key Features

  • Designed for wide RF bandwidth and low memory effects.
  • Broadband input on-chip matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. - Gain = 28.5 dB - Power Added Efficiency = 33 % - IMD3 =.
  • 32 dBc.
  • Typical CW performance at 2140 MHz, 28 V - Output power at P1dB ~ 20 W - Efficiency > 49%.
  • Integrated ESD protectio.

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Datasheet Details

Part number PTMA210152M
Manufacturer Wolfspeed
File Size 549.10 KB
Description Wideband RF LDMOS Integrated Power Amplifier
Datasheet download datasheet PTMA210152M Datasheet

Full PDF Text Transcription (Reference)

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PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation. PTMA210152M Package PG-DSO-20-63 Gain (dB) Return Loss (dB) Broadband Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA fixture tuned for 2110 - 2170 MHz 32 20 28 Gain 24 10 0 20 Return Loss 16 -10 -20 12 1500 1700 1900 2100 2300 Frequency (MHz) -30 2500 Features • Designed for wide RF bandwidth and low memory effects • Broadband input on-chip matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg.