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PTRA082808NF - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA082808NF is a 280-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 790 to 820 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 1.0 V, ƒ = 820 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 Gain 20 20 16 0 12 -20 8 -40 4 PAR @ 0.01% CCDF.

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Datasheet Details

Part number PTRA082808NF
Manufacturer Wolfspeed
File Size 483.72 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA082808NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTRA082808NF Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 1.0 V, ƒ = 820 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 Gain 20 20 16 0 12 -20 8 -40 4 PAR @ 0.